Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits

Name: Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits
Brand: Springer-Verlag New York Inc.
SKU: 9781441942852
Price: 64320 HUF
Availability: InStock

Szerző: Manoj Sachdev, José Pineda de Gyvez

Nyelv:

Kötés: Puha kötésű

Kiadó: Springer-Verlag New York Inc.

Elérhetőség: Beszállítói készleten

Küldés 10-18 napon belül

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Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to...

Információk a könyvről

Szerző

Manoj Sachdev, José Pineda de Gyvez

Nyelv

Angol

Kötés

Könyv - Puha kötésű

Kiadva

2010

oldal

328

EAN

9781441942852

ISBN

1441942858

Enbook ID

01422783

Kiadó

Springer-Verlag New York Inc.

Súly

539

Méretek

155 x 235 x 18

Teljes leírás

Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to significant challenges for IC testing. As the variation of fundamental parameters such as channel length, threshold voltage, thin oxide thickness and interconnect dimensions goes well beyond acceptable limits, new test methodologies and a deeper insight into the physics of defect-fault mappings are needed. In Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits state of the art of defect-oriented testing is presented from both a theoretical approach as well as from a practical point of view. Step-by-step handling of defect modeling, defect-oriented testing, yield modeling and its usage in common economics practices enables deeper understanding of concepts.§The progression developed in this book is essential to understand new test methodologies, algorithms and industrial practices. Without the insight into the physics of nano-metric technologies, it would be hard to develop system-level test strategies that yield a high IC fault coverage. Obviously, the work on defect-oriented testing presented in the book is not final, and it is an evolving field with interesting challenges imposed by the ever-changing nature of nano-metric technologies. Test and design practitioners from academia and industry will find that Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits lays the foundations for further pioneering work.The 2nd edition of defect oriented testing has been extensively updated. New chapters on Functional, Parametric Defect Models and Inductive fault Analysis and Yield Engineering have been added to provide a link between defect sources and yield. The chapter on RAM testing has been updated with focus on parametric and SRAM stability testing. Similarly, newer material has been incorporated in digital fault modeling and analog testing chapters. The strength of Defect Oriented Testing for nano-Metric CMOS VLSIs lies in its industrial relevance.

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Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits

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