Device Performance and Reliability in SOI MOSFET

Name: Device Performance and Reliability in SOI MOSFET
Brand: LAP Lambert Academic Publishing
SKU: 9783659186172
Price: 20540 HUF
Availability: InStock

Studies on Channel Coupling and Floating Body Effects in SOI

Szerző: Franklin Duan

Nyelv:

Kötés: Puha kötésű

Kiadó: LAP Lambert Academic Publishing

Elérhetőség: Kiadói készleten rendelésre

Küldés 17-27 napon belül

20 540 Ft

SOI MOSFET is one of the promising options for the future VLSI market due to its low power/high spee...

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Szerző

Franklin Duan

Nyelv

Angol

Kötés

Könyv - Puha kötésű

Kiadva

2012

oldal

128

EAN

9783659186172

Enbook ID

06921086

Kiadó

LAP Lambert Academic Publishing

Súly

207

Méretek

150 x 220 x 8

Teljes leírás

SOI MOSFET is one of the promising options for the future VLSI market due to its low power/high speed character and simplified technology with increased packing density. Yet some problems in device physics must be fully understood before SOI is implemented in industry. In this thesis, optimized technology directions to balance the tradeoff between Performance & Reliability in SOI MOSFET are suggested. 1. Extensive study on the opposite-channel-based injection (OCBI) by manipulating these two gates is carried out by copious PISCES simulations. 2. the channel coupling effect was extensively carried out; both on electric field and impact ionization by numerical simulation. 3. the width effect of floating body effect was analyzed by a two-dimensional simulation which mimics its three dimensional features. 4. a new FD SOI MOSFET structure is proposed, which holds the drawbacks of low channel mobility in the inversion mode and poor latch-up voltage in the accumulation mode. 5. the compatibility of LDD technology to SOI was studied.

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Device Performance and Reliability in SOI MOSFET

Studies on Channel Coupling and Floating Body Effects in SOI

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