Könyv Dielectric and Work Function Engineered Doping-Less Tunnel FET N. B. Balamurugan

Dielectric and Work Function Engineered Doping-Less Tunnel FET

Nyelv: Angol
Kötés: Puha kötésű
Elérhetőség: Beszállítói készleten
Küldés 5-8 napon belül
24 097 Ft
The perpetual downscaling of devices has achieved higher packaging density and faster switching perf...

Információk a könyvről

Nyelv
Angol
Kötés
Könyv - Puha kötésű
Kiadva
2020
oldal
200
EAN
9786202672030
ISBN
620267203X
Enbook ID
36932783
Súly
316
Méretek
150 x 220 x 12

Teljes leírás

The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.

Érdekelheti

3 838 Ft
3 838 Ft

Lust

Jiwan Shukla
6 312 Ft

All Together Now

Erik Samuelson
9 594 Ft

The Master Key

L W. De Laurence
14 189 Ft
10 024 Ft

A Boy Named Nicholas

Gabriel Gonzalez
4 008 Ft

Azok a vásárlók, akik ezt a könyvet megvásárolták, a következőket is megvásárolták

15 906 Ft
26 572 Ft