Könyv ELECTRON TRANSPORT IN InSb HETEROSTRUCTURES BASED MESOSCOPIC DEVICES Niti Goel

ELECTRON TRANSPORT IN InSb HETEROSTRUCTURES BASED MESOSCOPIC DEVICES

Szerző: Niti Goel
Nyelv: Angol
Kötés: Puha kötésű
Kiadó: VDM Verlag
Elérhetőség: Kiadói készleten rendelésre
Küldés 17-27 napon belül
24 198 Ft
Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowe...

Információk a könyvről

Szerző
Nyelv
Angol
Kötés
Könyv - Puha kötésű
Kiadva
2010
oldal
200
EAN
9783639179187
ISBN
3639179188
Enbook ID
06826157
Kiadó
Súly
299
Méretek
152 x 229 x 12

Teljes leírás

Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and the smallest electron effective mass (m = 0.0139m0). These characteristics make InSb quantum wells (QWs) with remotely doped AlxIn1-xSb barriers promising for several novel devices. The promise of InSb QWs for spin transistors has been shown recently by experiments that demonstrate ballistic transport and a large zero- field spin splitting. Mesoscopic magnetoresistors that take advantage of the high electron mobility in InSb QWs at room temperature are being explored for read head applications. For some applications, the carriers are required to travel ballistically through the channel. Four-terminal structures and quantum point contacts are investigated to explore the unique effects of narrow-gap properties on ballistic transport. For all the applications, there is also a need to increase the room and low temperature mobilities with negligible parallel conduction paths in these quantum well structures.

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