Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures

Name: Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures
Brand: LAP Lambert Academic Publishing
SKU: 9783659927140
Price: 18817 HUF
Availability: InStock

Szerző: Varra Rajagopal Reddy, B. Prasanna Lakshmi

Nyelv:

Kötés: Puha kötésű

Kiadó: LAP Lambert Academic Publishing

Elérhetőség: Beszállítói készleten

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Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advan...

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Szerző

Varra Rajagopal Reddy, B. Prasanna Lakshmi

Nyelv

Angol

Kötés

Könyv - Puha kötésű

Kiadva

2016

oldal

148

EAN

9783659927140

Enbook ID

13926463

Kiadó

LAP Lambert Academic Publishing

Súly

213

Méretek

150 x 220 x 8

Teljes leírás

Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advantages such as a small gate leakage current, a large gate forward voltage, and surface passivation effect suppressing the drain current collapse. However, conventional Schottky barrier transistors suffer from the high gate leakage current and in particular the leakage current in the forward direction can cause fast device degradation. Reduction of the gate leakage current can be realized by employing an insulated gate metal-oxide-semiconductor technique. The interest in the experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky diodes rooted in their importance of the insulating layer between metal and semiconductor. The existence of such interfacial layer can have strong influence on the device characteristics such as the barrier height, ideality factor, and as well the interface state density. Due to the technological importance of the metal-insulator-semiconductor (MIS), a full understanding of its electrical properties is of great interest.

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Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures

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