Könyv Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance Shur Michael S

Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance

Szerző: Shur Michael S
Nyelv: Angol
Kötés: Kemény kötésű
Elérhetőség: 50 % esély
Keressük az egész világon
66 100 Ft
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest...

Információk a könyvről

Szerző
Nyelv
Angol
Kötés
Könyv - Kemény kötésű
Kiadva
2004
oldal
300
EAN
9789812388445
ISBN
9812388443
Enbook ID
05067772
Súly
650
Méretek
179 x 261 x 22

Teljes leírás

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

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