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Könyv Materials Reliability in Microelectronics VI : Volume 428 J. Joseph Clement

Materials Reliability in Microelectronics VI : Volume 428

Szerző: J. Joseph Clement, William F. Filter, Patrick M. Lenahan, Anthony S. Oates, Robert Rosenberg
Nyelv: Angol
Kötés: Kemény kötésű
Kiadó: Materials Research Society
Elérhetőség: Utánnyomás
Megjelenés ismeretlen
9 187 Ft
MRS books on materials reliability in microelectronics have become the snapshot of progress in this...

Információk a könyvről

Szerző
J. Joseph Clement, William F. Filter, Patrick M. Lenahan, Anthony S. Oates, Robert Rosenberg
Nyelv
Angol
Kötés
Könyv - Kemény kötésű
Kiadva
1996
oldal
583
EAN
9781558993310
ISBN
1558993312
Enbook ID
02060085
Kiadó
Materials Research Society
Súly
955
Méretek
160 x 236 x 33

Teljes leírás

MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.

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