Könyv Novel Structural Polycrystalline Silicon Thin Film  Transistor Kuo-Dong Huang

Novel Structural Polycrystalline Silicon Thin Film Transistor

Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator

Szerző: Kuo-Dong Huang
Nyelv: Angol
Kötés: Puha kötésű
Elérhetőség: Kiadói készleten rendelésre
Küldés 17-27 napon belül
24 220 Ft
This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (...

Információk a könyvről

Szerző
Nyelv
Angol
Kötés
Könyv - Puha kötésű
Kiadva
2011
oldal
192
EAN
9783639129878
Enbook ID
06821735
Méretek
150 x 220 x 12

Teljes leírás

This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc.. Novel buried-oxide polysilicon thin-film transistors (poly-Si TFTs) are proposed and demonstrated to be superior to their conventional counterparts. Furthermore, these novel structures are simple to fabricate, practical, and completely compatible on CMOS technology. Otherwise, the poly-Si TFT with/without NH3 annealing and body implantation, and their corresponding effects, have also been investigated and discussed in depth.

Érdekelheti

16 041 Ft
29 526 Ft
109 320 Ft
7 950 Ft
19 340 Ft
2 978 Ft

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